Powered by Samsung's 5th generation V-NAND, the new Universal Flash Storage offers 20 times more storage space than 64GB of internal storage and 10 times faster speed than a standard microSD card for data-intensive applications.
Η Samsung Electronics Co., Ltd., a world leader in advanced memory technology, today announced the mass production of the industry's first terabyte-sized, integrated Universal Flash Storage (eUFS) 2.1 for use in next-generation mobile applications. Just four years after the announcement of the first UFS solution, the 128GB eUFS, Samsung exceeded the long-awaited limit of one terabyte in smartphone storage. Smartphone enthusiasts will soon be able to enjoy storage capacity comparable to that of a premium notebook PC, without having to add extra memory cards to their mobile phones.
"1TB eUFS is expected to play an important role in creating an upgraded user experience on next-generation mobile devices, similar to that of notebooks," said Cheol Choi, Executive Vice President of Memory Sales & Marketing at Samsung Electronics. "Samsung is also committed to securing the most reliable supply chain and sufficient production volumes to support the release of upcoming flagship smartphones, with the aim of accelerating growth in the global mobile phone market."
Maintaining the same package size (11.5mm x 13.0mm), the 1TB eUFS solution doubles the capacity of the previous 512GB version, combining 16 layers of more advanced 512GB V-NAND flash memory and a newly developed proprietary memory controller. Smartphone users will be able to store 260 ten-minute videos in 4K UHD resolution (3840X2160), while the standard 64GB eUFS, displayed by most modern smartphones, can store 13 videos of the same size.
1TB eUFS is extremely fast, allowing users to transfer large, multimedia content in significantly less time. At speeds of up to 1.000 megabytes per second (MB / s), the new eUFS has about twice the sequential read speed of a standard 2.5-inch SATA SSD. This means that 5GB full HD videos can be downloaded to an NVMe SSD in just five seconds, which is 10 times faster than a standard microSD card. In addition, the random read speed has been increased by 38% compared to the 512GB version, reaching 58.000 IOPS. Random registrations are 500 times faster than a high-performance microSD card (100 IOPS), reaching 50.000 IOPS. Random speeds allow continuous high-speed shooting at 960 frames per second and give smartphone users the opportunity to make the most of the multi-camera capabilities of modern devices and next-generation flagships.
For the first half of 2019, Samsung plans to expand production of the next-generation V-NAND 512GB at its plant in Korea to manage the high demand for the long-awaited 1TB eUFS from mobile device manufacturers worldwide.
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